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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

By (author) Yue Hao, By (author) Jin Feng Zhang, By (author) Jin Cheng Zhang

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normal price: R 9 233.95

Price: R 8 771.95


| book description |

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

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Normally shipped | This title will take longer to obtain, and should be delivered in 6-8 weeks
Publisher | Taylor & Francis Inc
Published date | 3 Oct 2016
Language |
Format | Hardback
Pages | 392
Dimensions | 254 x 178 x 0mm (L x W x H)
Weight | 884g
ISBN | 978-1-4987-4512-3
Readership Age |
BISAC |


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Normally shipped | Available from overseas. Usually dispatched in 14 days
Readership Age |
Normal Price | R 11 165.95
Price | R 10 607.95 | on special |



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